Aluminum Nitride ceramic substrates and Silicon Nitride ceramic substrates are core thermal dissipation/packaging materials for third-generation semiconductors and high-power electronics. Their key advantages include extremely high thermal conductivity, thermal expansion matching that of silicon, excellent insulation, and superior mechanical properties.
Heat dissipation substrates
Power electronic circuit substrates
| Property Sort | Characteristic | Unit | Property Index | ||
| SiN80 | SiN130 | ||||
| Basic Property | Color | — | Gray | Gray | |
| Water absorption | % | 0 | 0 | ||
| Volume density | g/cm³ | ≥3.22 | ≥3.22 | ||
| Surface roughness | um | As-fired 0.1-0.4 | As-fired 0.1-0.4 | ||
| — | — | ||||
| Camber | length% | ≤3% | ≤3% | ||
| Thermal Property | Thermal conductivity | 25℃ | W/m.k | ≥80 | ≥130 |
| 300℃ | — | — | |||
| Coefficient of thermal expansion | 40℃~400℃ | ×10⁻⁶/k | 2.6 | 2.6 | |
| 40℃~800℃ | 3.1 | 3.1 | |||
| Specific Heat（25°C） | J/(kg*K) | 680 | 680 | ||
| Poisson's Ratio | — | 0.24 | 0.24 | ||
| Mechanical Property | Bending strength（Three points） | Mpa | ≥750 | ≥600 | |
| Modulus strength | Gpa | 310 | 310 | ||
| Moh's hardness | — | 9 | 9 | ||
| Vickers hardness | Gpa | 15 | 15 | ||
| Fracture Toughness（IF test） | Mpa·m¹ᐟ² | 6.5 | 6 | ||
| Electrical Property | Dielectric strength | KV/mm | ≥15 | ≥15 | |
| Volume resistivity（25℃） | Ω·cm | ≥10¹⁴ | ≥10¹⁴ | ||
| Dielectric constant | 1MHz | 7.8 | 7.8 | ||
| Dielectric loss | 1MHz，×10⁻³ | 0.3 | 0.3 | ||
| Dimension(mm) | Thickness(mm) | Others |
| 190.5*139.7(Other dimensions customizable upon request.) | 0.25/0.32/0.38/0.5/0.635 |
Tolerance(Dimension):±1%，NLT:±0.05mm
Tolerance(Thickness):±10%，NLT:±0.02mm
Roughness :(Lapping):Ra0.2~0.6um
(As fired):Ra0.1~0.4um
Camber: ≤3%
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