In semiconductor processing equipment, the core components that hold and secure wafers must integrate
temperature-controlled heating functionality, imposing stringent requirements on material properties. They
need to possess ultra-high thermal conductivity for precise and uniform wafer temperature control; closely
match the coefficient of thermal expansion (CTE) of silicon wafers to ensure that ultra-thin and
large-diameter
wafers remain stress-free and distortion-free during high-low temperature cycles; and simultaneously provide
high electrical insulation, resistance to plasma bombardment, and long-term resistance to highly corrosive
process gases. These properties are critical determinants of process stability and chip yield.
With our material systems and precision engineering, we overcome these core challenges with targeted
solutions, continuously empowering semiconductor equipment with enhanced performance and process
efficiency.
Core components of semiconductor chip manufacturing equipment operate for extended periods in
extreme process environments characterized by high temperatures, strong corrosion, and high cleanliness.
By selecting high-quality silicon carbide (SiC) material, employing rational structural design, strictly
controlling machining accuracy, and applying special surface treatments, the resulting precision structural
components meet the demanding requirements of extreme stability, low contamination, and long service life.
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