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Aluminum Nitride Ceramic Substrates
  • Aluminum Nitride Ceramic SubstratesAluminum Nitride Ceramic Substrates

Aluminum Nitride Ceramic Substrates

As a professional manufacturer of aluminum nitride ceramic substrates in China, Haigude factory provides aluminum nitride (AlN) and silicon nitride (Si₃N₄) ceramic substrates. Their thermal conductivity is about 7 times that of aluminum oxide, their coefficient of thermal expansion is matched with that of silicon, and they have high insulation, low dielectric constant and excellent mechanical strength, making them suitable for heat dissipation packaging of third-generation semiconductors and high-power electronic devices.

Aluminum Nitride ceramic substrates and Silicon Nitride ceramic substrates are core thermal dissipation/packaging materials for third-generation semiconductors and high-power electronics. Their key advantages include extremely high thermal conductivity, thermal expansion matching that of silicon, excellent insulation, and superior mechanical properties.

Aluminum Nitride ceramic substrates

Features

  • Approximately 7 times higher thermal conductivity compared to Alumina
  • Thermal expansion coefficient close to that of silicon, achieving high reliability for mounting large silicon chips and thermal cycling
  • High electrical insulation and low dielectric constant
  • Better mechanical strength than alumina
  • Good corrosion resistance to molten metals
  • Extremely low impurity content, non-toxic, high purity

Applications

Heat dissipation substrates, Substrates for LED packaging, Substrates for semiconductors, Thin-film circuit substrates, Substrates for power resistors

Typical Properties

Property Sort Characteristic Unit Property Index
AlN170 AlN200 AlN230
Basic Property Color Gray Gray Beige
Water absorption % 0 0 0
Volume density g/cm³ ≥3.30 ≥3.30 ≥3.26
Surface roughness um Lapped 0.2~0.6 Lapped 0.2~0.6 Lapped 0.2~0.6
Polished<0.05 Polished<0.05 Polished<0.05
Camber length% ≤3% ≤3% ≤3%
Thermal Property Thermal conductivity 25℃ W/m.k ≥170 ≥200 ≥230
300℃ ≥120 ≥130 ≥145
Coefficient of thermal expansion 40℃~400℃ ×10⁻⁶/k 4.6 4.6 4.5
40℃~800℃ 5.2 5.2 5.2
Specific Heat(25°C) J/(kg*K) 720 720 720
Poisson's Ratio 0.24 0.24 0.24
Mechanical Property Bending strength(Three points) Mpa ≥450 ≥400 ≥350
Modulus strength Gpa 320 310 310
Moh's hardness 8 8 8
Vickers hardness Gpa 11 11 11
Fracture Toughness(IF test) Mpa·m¹ᐟ² 3 2.6 2.4
Electrical Property Dielectric strength KV/mm ≥25 ≥26 ≥27
Volume resistivity(25℃) Ω·cm ≥10¹⁴ ≥10¹⁴ ≥10¹³
Dielectric constant 1MHz 8.5 8.5 8.5
Dielectric loss 1MHz,×10⁻³ 0.3 0.3 0.3

Specification

Dimension(mm) Thickness(mm) Others
25*20 0.127/0.15/0.2/0.25/0.3/0.35/0.38/0.5/0.635/0.76/1.0/1.5/2.0/2.5/3.0 Tolerance(Dimension):±1%,NLT:±0.05mm Tolerance(Thickness):±10%,NLT:±0.01mm
Lapping(2 sides):Ra0.2~0.7um
Polished:Ra0.02~0.05um
Through hole:φ0.15mm~Tolerance:+0.05mm.NLT:+0.02mm
Laser drilling spot diameter:0.06~0.1mm
Laser drilling spot length:0.05~0.08,width:0.015~0.03Line depth:30%~70%,Tolerance:3%~10%
Camber:≤3%,NLT:0.5%
Flatness:20~70um
24*38
50.8*50.8
76.2*76.2
101.6*101.6
114.3*114.3
120*120 0.25/0.3/0.38/0.5/0.635/0.76/1.0/1.5/2.0/2.5/3.0
127*127
160*160
139.7*190.5
φ16/φ20/φ26/φ30 0.635/1.0/1.5/2.0
φ35/φ40/φ45/φ50
φ55/φ60/φ65/φ70
φ100/φ125/φ150/φ200 0.38/0.5/0.635/0.76/1.0/1.5/2.0/2.5/3.0
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Contact Info

Contact US

Sales Contact Information

Mobile:18912395558

Recruitment Contact Information

Mobile: 18061507533

Location

Wuxi Haigude New Technology Co.,Ltd

Add: No. 2567, Antai 2nd Road, Xishan District, Wuxi, Jiangsu, China

Jiangsu Haigude Semiconductor Technology Co., Ltd.

Add: Dongtai High-tech Zone, Dongtai, Yancheng, Jiangsu, China

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