As a professional manufacturer of aluminum nitride ceramic substrates in China, Haigude factory provides aluminum nitride (AlN) and silicon nitride (Si₃N₄) ceramic substrates. Their thermal conductivity is about 7 times that of aluminum oxide, their coefficient of thermal expansion is matched with that of silicon, and they have high insulation, low dielectric constant and excellent mechanical strength, making them suitable for heat dissipation packaging of third-generation semiconductors and high-power electronic devices.
Aluminum Nitride ceramic substrates and Silicon Nitride ceramic substrates are core thermal dissipation/packaging materials for third-generation semiconductors and high-power electronics. Their key advantages include extremely high thermal conductivity, thermal expansion matching that of silicon, excellent insulation, and superior mechanical properties.
Aluminum Nitride ceramic substrates
Features
Approximately 7 times higher thermal conductivity compared to Alumina
Thermal expansion coefficient close to that of silicon, achieving high reliability for mounting large silicon chips and thermal cycling
High electrical insulation and low dielectric constant
Better mechanical strength than alumina
Good corrosion resistance to molten metals
Extremely low impurity content, non-toxic, high purity
Applications
Heat dissipation substrates,
Substrates for LED packaging,
Substrates for semiconductors,
Thin-film circuit substrates,
Substrates for power resistors
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